inchange semiconductor product specification silicon npn power transistors 2SD917 description with to-3pn package high speed switching high v cbo large collector power dissipation applications for horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 330 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 7 a i cm collector current (pulse) 10 a i cm collector current (nonrepeatitive) 15 a p c collector power dissipation t c =25 70 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD917 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 200 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 330 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =0.5a 1.2 v i ces collector cut-off current v ce =330v; v be =0 ta=100 1 15 ma i ebo emitter cut-off current v eb =6v; i c =0 1 ma h fe-1 dc current gain i c =0.5a ; v ce =4v 120 240 h fe -2 dc current gain i c =5a ; v ce =4v 15 t f fall time i c =5a i b1 =0.8a,v eb =-5v,r b =0.5 0.75 s
inchange semiconductor product specification 3 silicon npn power transistors 2SD917 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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